Paper
12 April 2005 Laser technology for wafer dicing and microvia drilling for next generation wafers (Invited Paper)
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Abstract
Laser micromaching systems are being used in mainstream high-volume semiconductor applications. Two of those processes, via drilling and thin wafer dicing, are discussed in this paper. Via drilling has been proven viable for forming through chip and blind vias. The inherent flexibility of the laser process makes it possible to control via depth, diameter and sidewall slope. As a mask-less process, laser via drilling can be cost affective and highly flexible in its application. Thin wafer dicing reduces the breakage and damage to thin silicon wafers. A new process has been developed that improves the die strength of laser singulated devices beyond that obtained using conventional sawing techniques.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Richard F. Toftness, Adrian Boyle, and David Gillen "Laser technology for wafer dicing and microvia drilling for next generation wafers (Invited Paper)", Proc. SPIE 5713, Photon Processing in Microelectronics and Photonics IV, (12 April 2005); https://doi.org/10.1117/12.602033
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CITATIONS
Cited by 14 scholarly publications.
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KEYWORDS
Semiconducting wafers

Laser drilling

Laser processing

Dysprosium

Laser applications

Wafer dicing

Silicon

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