Characterization of chemically assisted ion beam etching and form birefringence structure fabrication in GaAs using SU-8

Lin Pang; Maziar Nezhad; Uriel Levy; Chiaho Tsai; Yeshaiahu Fainman

doi:10.1117/12.590564

22 January 2005 Characterization of chemically assisted ion beam etching and form birefringence structure fabrication in GaAs using SU-8

Lin Pang, Maziar Nezhad, Uriel Levy, Chiaho Tsai, Yeshaiahu Fainman

Author Affiliations +

Proceedings Volume 5720, Micromachining Technology for Micro-Optics and Nano-Optics III; (2005) https://doi.org/10.1117/12.590564
Event: MOEMS-MEMS Micro and Nanofabrication, 2005, San Jose, California, United States

Abstract

We describe an approach to use the thin layer of SU-8 submicron pattern produced by holographic lithography as dry etching mask in chemically assisted ion beam etching (CAIBE) system. The effect of chlorine gas flow on etched sidewall was investigated; by matching the lateral etch and deposition rate, etching selectivity of about 7:1 has been achieved with vertical and smooth sidewall and damage-free upper portion of the etched structure. As an application, a half wavelength retardation plate for 1.55 mm wavelength was designed, fabricated and characterized.

Citation Download Citation

Lin Pang, Maziar Nezhad, Uriel Levy, Chiaho Tsai, and Yeshaiahu Fainman "Characterization of chemically assisted ion beam etching and form birefringence structure fabrication in GaAs using SU-8", Proc. SPIE 5720, Micromachining Technology for Micro-Optics and Nano-Optics III, (22 January 2005); https://doi.org/10.1117/12.590564

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KEYWORDS

Etching

Chlorine

Gallium arsenide

Ion beams

Photomasks

Dry etching

Holography

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