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22 January 2005 Characterization of chemically assisted ion beam etching and form birefringence structure fabrication in GaAs using SU-8
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Abstract
We describe an approach to use the thin layer of SU-8 submicron pattern produced by holographic lithography as dry etching mask in chemically assisted ion beam etching (CAIBE) system. The effect of chlorine gas flow on etched sidewall was investigated; by matching the lateral etch and deposition rate, etching selectivity of about 7:1 has been achieved with vertical and smooth sidewall and damage-free upper portion of the etched structure. As an application, a half wavelength retardation plate for 1.55 mm wavelength was designed, fabricated and characterized.
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Lin Pang, Maziar Nezhad, Uriel Levy, Chiaho Tsai, and Yeshaiahu Fainman "Characterization of chemically assisted ion beam etching and form birefringence structure fabrication in GaAs using SU-8", Proc. SPIE 5720, Micromachining Technology for Micro-Optics and Nano-Optics III, (22 January 2005); https://doi.org/10.1117/12.590564
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