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28 April 2005 A novel light-emitting structure for the 3- to 5-μm spectral range
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We present a novel hybrid light emitting device design based on a standard InAlGaAs/GaAs high-power laser diode array chip as a pump source and a narrow-gap PbSe-layer as active optical material. Maximum cw output powers of more than 1.1 mW and slope efficiencies of 0.4 mW/A are obtained at 25 °C. The external power efficiency amounts to 3.5×10-2 %. The emission wavelength is 4.2 μm, with a half width of 770 nm (50 meV). Details about the optimization of the emitter material and device design are discussed as well.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. W. Tomm, F. Weik, R. Glatthaar, U. Vetter, J. Nurnus, A. Lambrecht, B. Spellenberg, M. Bassler, M. Behringer, and J. Luft "A novel light-emitting structure for the 3- to 5-μm spectral range", Proc. SPIE 5722, Physics and Simulation of Optoelectronic Devices XIII, (28 April 2005);


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