Optical gate realization by laser crossing in thin-film semiconductors on glass

Artur Erlacher; Bruno Ullrich; Ryan J. Konopinski; Heather J. Haugan

doi:10.1117/12.590760

4 April 2005 Optical gate realization by laser crossing in thin-film semiconductors on glass

Artur Erlacher, Bruno Ullrich, Ryan J. Konopinski, Heather J. Haugan

Proceedings Volume 5723, Optical Components and Materials II; (2005) https://doi.org/10.1117/12.590760
Event: Integrated Optoelectronic Devices 2005, 2005, San Jose, California, United States

Abstract

We investigated a novel possibility to attain all-optical logical gates. The host of the device was a thin-film semiconductor (CdS, GaAs, InP) on glass produced by various methods (pulsed-laser deposition and metal organic chemical vapor deposition). In the thin-film two visible laser beams, the primary and secondary ray, were crossed in the same spot. In this way, the secondary beam caused a transmission decrease in the primary beam. Laser crossing is an extremely undemanding concept based on electronic absorption alterations. Apparently, every semiconductor can be used for laser crossed all-optical logics and, in contrary to other semiconductor based concepts, laser crossing does not demand specific materials, material qualities or nonlinear features. The unmatched overall simplicity and possible THz operations recommend laser crossing for the realization of all-optical digital devices.

Citation Download Citation

Artur Erlacher, Bruno Ullrich, Ryan J. Konopinski, and Heather J. Haugan "Optical gate realization by laser crossing in thin-film semiconductors on glass", Proc. SPIE 5723, Optical Components and Materials II, (4 April 2005); https://doi.org/10.1117/12.590760

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