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13 April 2005 Recombination dynamics of localized biexcitons in AlGaN ternary alloys (Invited Paper)
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Abstract
Excitonic optical properties of Ga-rich AlxGa1-xN ternary alloy epitaxial layers are reviewed on the basis of our recent experimental observations. Photoluminescence due to radiative recombination of biexcitons was clearly observed from the ternary alloys with different aluminum compositions (x=0.019 ~ 0.15). Recombination dynamics of excitons and biexcitons was studied by means of time-resolved photoluminescence spectroscopy. The effect of localization due to alloy disorder on biexcitons was also studied by means of photoluminescence excitation spectroscopy. A Stokes shift of biexcitons was defined experimentally on the basis of two-photon absorption of biexcitons in order to evaluate the degree of biexciton localization quantitatively. A binding energy of biexcitons was determined as a function of aluminum composition. The biexciton localization due to alloy disorder resulted in a strong enhancement of the biexciton binding energy.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yoichi Yamada "Recombination dynamics of localized biexcitons in AlGaN ternary alloys (Invited Paper)", Proc. SPIE 5725, Ultrafast Phenomena in Semiconductors and Nanostructure Materials IX, (13 April 2005); https://doi.org/10.1117/12.584725
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