Shaping the steady states of picosecond optical pulses in dissipative soliton regime by fast-relaxing multilayer semiconductor laser structures

Alexandre S. Shcherbakov; Mauro Sanchez Sanchez

doi:10.1117/12.590570

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13 April 2005 Shaping the steady states of picosecond optical pulses in dissipative soliton regime by fast-relaxing multilayer semiconductor laser structures

Alexandre S. Shcherbakov, Mauro Sanchez Sanchez

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Proceedings Volume 5725, Ultrafast Phenomena in Semiconductors and Nanostructure Materials IX; (2005) https://doi.org/10.1117/12.590570
Event: Integrated Optoelectronic Devices 2005, 2005, San Jose, California, United States

Abstract

The results of studying the steady states for bright and dark dissipative optical solitons, appearing in single-mode semiconductor laser structure multilayered in a direction of passing the waves, are presented. These types of solitons occur due to reshaping the incoming optical pulses via the passive mode-locking process in traveling-wave regime. The relations between the pulse parameters and the structures’ properties are chosen in such a way that the mode-locking process is incoherent in behavior that leads to the phase decay of the incoming pulses. The analysis demonstrates that both bright asymmetrical and dark (or flashing) dissipative optical solitons can be supported by such structure with a weakly illocal slowly saturable gain and a fast-relaxing saturable absorption.

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Alexandre S. Shcherbakov and Mauro Sanchez Sanchez "Shaping the steady states of picosecond optical pulses in dissipative soliton regime by fast-relaxing multilayer semiconductor laser structures", Proc. SPIE 5725, Ultrafast Phenomena in Semiconductors and Nanostructure Materials IX, (13 April 2005); https://doi.org/10.1117/12.590570

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