Ultrafast intersubband relaxation in GaN/AlN MQWs

Junichi Hamazaki; Keita Ikuno; Hikaru Takahashi; Hideyuki Kunugita; Kazuhiro Ema; Akihiko Kikuchi; Katsumi Kishino

doi:10.1117/12.589568

13 April 2005 Ultrafast intersubband relaxation in GaN/AlN MQWs (Invited Paper)

Junichi Hamazaki, Keita Ikuno, Hikaru Takahashi, Hideyuki Kunugita, Kazuhiro Ema, Akihiko Kikuchi, Katsumi Kishino

Proceedings Volume 5725, Ultrafast Phenomena in Semiconductors and Nanostructure Materials IX; (2005) https://doi.org/10.1117/12.589568
Event: Integrated Optoelectronic Devices 2005, 2005, San Jose, California, United States

Abstract

We have investigated the ultrafast relaxation dynamics of intersubband transition (ISBT) in GaN/AlN, using a two-color pump-probe technique, in a wide energy range around the optical communication wavelength. We suggest that the origin of the signal depends on the relation between the pump and probe pulse energies. We have observed an ultrafast induced absorption signal and a slow negative component which are due to the absorption of electrons during intra-subband scattering and a carrier cooling process with a hot-phonon effect, respectively. Moreover, we clarify the origin of the inhomogeneous broadening width of the ISBT and of the intrinsic absorption width of ISBT from the detailed analyses of the result. We have reproduced the relaxation dynamics by a numerical calculation to confirm this interpretation of ISBT relaxation dynamics.

Citation Download Citation

Junichi Hamazaki, Keita Ikuno, Hikaru Takahashi, Hideyuki Kunugita, Kazuhiro Ema, Akihiko Kikuchi, and Katsumi Kishino "Ultrafast intersubband relaxation in GaN/AlN MQWs (Invited Paper)", Proc. SPIE 5725, Ultrafast Phenomena in Semiconductors and Nanostructure Materials IX, (13 April 2005); https://doi.org/10.1117/12.589568

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