320x240 pixel InGaAs/InP focal plane array for short-wave infrared and visible light imaging

Tara Martin; Peter Dixon; Mari-Anne Gagliardi; Navneet Masaun

doi:10.1117/12.596409

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7 April 2005 320x240 pixel InGaAs/InP focal plane array for short-wave infrared and visible light imaging

Tara Martin, Peter Dixon, Mari-Anne Gagliardi, Navneet Masaun

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Proceedings Volume 5726, Semiconductor Photodetectors II; (2005) https://doi.org/10.1117/12.596409
Event: Integrated Optoelectronic Devices 2005, 2005, San Jose, California, United States

Abstract

We report on the recent production release of our 320x240 pixel InGaAs/InP focal plane array and camera for visible and short-wavelength infrared light imaging. For this camera, we have fabricated a substrate-removed backside-illuminated InGaAs/InP photodiode array hybridized to a silicon read out integrated circuit (ROIC). Removing the InP substrate from the focal plane array allows visible wavelengths, which would otherwise be absorbed by the InP substrate due to its 920 nm wavelength cut-off, to reach the pixels’ active region. Quantum efficiency is approximately 15% at 500 nm, 70% at 850 nm, 85% at 1310 nm and 80% at 1550 nm. This focal plane array is useable for visible imaging as well as imaging eye-safe lasers and is of particular interest for day and low light level imaging as well as hyperspectral imaging.

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Tara Martin, Peter Dixon, Mari-Anne Gagliardi, and Navneet Masaun "320x240 pixel InGaAs/InP focal plane array for short-wave infrared and visible light imaging", Proc. SPIE 5726, Semiconductor Photodetectors II, (7 April 2005); https://doi.org/10.1117/12.596409

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