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7 April 2005 576x6 ROIC for MCT LWIR arrays
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Abstract
Silicon ROIC for MCT LWIR 576x6 diode matrix arrays was designed. It includes 4 blocks of 144x6 arrays with 56x43 micron pixels. Diodes shift perpendicular to scanning direction is 0.25 of pixel size. ROICs were designed for their manufacturing by 0.6 micron design rules CMOS technology with 2 polysilicon levels and 2 metal levels. Six elements TDI function is used with bidirectional scanning, “dead” elements deselection, gain trim control, image data format and integration time selection, 8 levels input capacity programming, direct testing of the PV sensitive elements, etc. Max input capacity is 2.7 pC, the capacity at the TDI output register is about 2.0 pC, the output signal amplitude is not less than 2.8 V, the dynamic range is 77 dB. There are 8 video outputs, and the frequency range is 5 MHz.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Fiodor Fedorovych Sizov, Yuriy P. Derkach, Sergei V. Korinets, and Vladimir P. Reva "576x6 ROIC for MCT LWIR arrays", Proc. SPIE 5726, Semiconductor Photodetectors II, (7 April 2005); https://doi.org/10.1117/12.591708
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