Photoconductivity in lateral conduction self-assembled Ge/Si quantum dot infrared photodetectors

S.-W. Lee; C. J. Park; T. W. Kang; H. Y. Cho; K. Hirakawa

doi:10.1117/12.588445

7 April 2005 Photoconductivity in lateral conduction self-assembled Ge/Si quantum dot infrared photodetectors

S.-W. Lee, C. J. Park, T. W. Kang, H. Y. Cho, K. Hirakawa

Proceedings Volume 5726, Semiconductor Photodetectors II; (2005) https://doi.org/10.1117/12.588445
Event: Integrated Optoelectronic Devices 2005, 2005, San Jose, California, United States

Abstract

We have investigated the photocurrent spectra of lateral conduction self-assembled Ge/Si quantum dots (QDs) infrared photodetector structure. We have observed a broad mid-infrared photocurrent spectrum in photon energy range of 120-400 meV (λ~3-10 μm) due to bound-to-bound as well as bound-to-continuum intersubband transition of normal incidence radiation in the valence band of self-assembled Ge QDs and subsequent lateral transport of photoexcited carriers in the Si/SiGe two-dimensional channel. The peak responsivity was as high as 134 mA/W at photon energy of 240 meV (λ~5.2 μm) at T=10 K and V_b=8 V.

Citation Download Citation

S.-W. Lee, C. J. Park, T. W. Kang, H. Y. Cho, and K. Hirakawa "Photoconductivity in lateral conduction self-assembled Ge/Si quantum dot infrared photodetectors", Proc. SPIE 5726, Semiconductor Photodetectors II, (7 April 2005); https://doi.org/10.1117/12.588445

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