Direct-write e-beam sub-micron domain engineering in liquid phase epitaxy LiNbO3 thin films

Ji-Won Son; Yin Yuen; Sergei S. Orlov; Ludwig Galambos; Lambertus Hesselink

doi:10.1117/12.589312

31 March 2005 Direct-write e-beam sub-micron domain engineering in liquid phase epitaxy LiNbO₃ thin films

Ji-Won Son, Yin Yuen, Sergei S. Orlov, Ludwig Galambos, Lambertus Hesselink

Proceedings Volume 5728, Integrated Optics: Devices, Materials, and Technologies IX; (2005) https://doi.org/10.1117/12.589312
Event: Integrated Optoelectronic Devices 2005, 2005, San Jose, California, United States

Abstract

By using a direct-write e-beam technique with liquid phase epitaxy LiNbO₃ thin films, we have successfully produced sub-micron domain structures for achieving dynamically switchable filters in a periodically poled lithium niobate (PPLN) waveguide. Sub-micron domain (~200 nm) structures with a period ~1.2 um are realized in liquid phase epitaxy LiNbO₃ films on congruent LiNbO₃ substrates by using the direct-write e-beam domain engineering method. In comparison with single crystal congruent LiNbO₃ (CLN) and stoichiometric LiNbO₃ (SLN), we show that LPE LiNbO₃ is the most promising material for producing superior domain regularities and finer domain sizes than single crystals. A physical model is presented to qualitatively explain the observed differences in structure and regularity of the induced periodic domains among the three different materials we studied. We postulate that the higher Li/Nb ratio in LPE LN than in CLN enhances domain inversion initiation. Also, we believe that the vanadium incorporation and distortion due to the lattice mismatch between films and substrates enhance electron localization, domain wall pinning and domain nucleation in LPE materials, giving rise to better structures.

Citation Download Citation

Ji-Won Son, Yin Yuen, Sergei S. Orlov, Ludwig Galambos, and Lambertus Hesselink "Direct-write e-beam sub-micron domain engineering in liquid phase epitaxy LiNbO₃ thin films", Proc. SPIE 5728, Integrated Optics: Devices, Materials, and Technologies IX, (31 March 2005); https://doi.org/10.1117/12.589312

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