Silicon nanowire active integrated optics

Richard M. Osgood Jr.; Richard L. Espinola; Jerry I. Dadap; Sharee J. McNab; Yuri A. Vlasov

doi:10.1117/12.598030

25 March 2005 Silicon nanowire active integrated optics

Richard M. Osgood Jr., Richard L. Espinola, Jerry I. Dadap, Sharee J. McNab, Yuri A. Vlasov

Proceedings Volume 5729, Optoelectronic Integrated Circuits VII; (2005) https://doi.org/10.1117/12.598030
Event: Integrated Optoelectronic Devices 2005, 2005, San Jose, California, United States

Abstract

We employ ultranarrow silicon-on-insulator (SOI) waveguides to demonstrate significant Raman gain using low CW pump powers from a diode laser. Starting with measurements based on spontaneous Raman scattering in nanowire SOI waveguides, we obtain the parameters necessary to develop a useful numerical modeling tool for our system. This work shows clearly the feasibility of an SOI-based low-loss, low-power, on-chip Raman amplifier in the silicon nanowire system. We have also developed a rigorous coupled wave model to examine temporal effects in our Raman system.

Citation Download Citation

Richard M. Osgood Jr., Richard L. Espinola, Jerry I. Dadap, Sharee J. McNab, and Yuri A. Vlasov "Silicon nanowire active integrated optics", Proc. SPIE 5729, Optoelectronic Integrated Circuits VII, (25 March 2005); https://doi.org/10.1117/12.598030

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