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7 March 2005 Broad-spectrum light emission from metal-insulator-silicon tunnel diodes
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We report broad-spectrum electroluminescence (EL) in metal-insulator-silicon (MIS) tunnel diodes. In addition to Si-band-edge EL near 1.1 eV, hot-electron EL in Si can span a detector-limited range from 0.7 eV to 2.6 eV (1780 nm to 480 nm). The maximum EL photon energy increases with forward-bias voltage. In one implementation, sub-micron-size sites for light emission appear during forward-bias stress. The number of sites is linear in the applied current, consistent with formation of an anti-fuse at each site following breakdown of the insulator. We compare the post-stress current-voltage data to the quantum-point-contact model. Results are presented for various p-type Si(100) MIS devices having thin (8 nm or less) insulating layers of SiO2, Al2O3, and HfOxNy. We also describe novel MIS devices in which electron-beam lithography of an 18-nm-thick SiO2 insulator is used to define the EL sites.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
James G. Mihaychuk, Mike W. Denhoff, Sean P. McAlister, W. Ross McKinnon, Jean Lapointe, and Albert Chin "Broad-spectrum light emission from metal-insulator-silicon tunnel diodes", Proc. SPIE 5730, Optoelectronic Integration on Silicon II, (7 March 2005);

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