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7 March 2005 Broad-spectrum light emission from metal-insulator-silicon tunnel diodes
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Abstract
We report broad-spectrum electroluminescence (EL) in metal-insulator-silicon (MIS) tunnel diodes. In addition to Si-band-edge EL near 1.1 eV, hot-electron EL in Si can span a detector-limited range from 0.7 eV to 2.6 eV (1780 nm to 480 nm). The maximum EL photon energy increases with forward-bias voltage. In one implementation, sub-micron-size sites for light emission appear during forward-bias stress. The number of sites is linear in the applied current, consistent with formation of an anti-fuse at each site following breakdown of the insulator. We compare the post-stress current-voltage data to the quantum-point-contact model. Results are presented for various p-type Si(100) MIS devices having thin (8 nm or less) insulating layers of SiO2, Al2O3, and HfOxNy. We also describe novel MIS devices in which electron-beam lithography of an 18-nm-thick SiO2 insulator is used to define the EL sites.
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James G. Mihaychuk, Mike W. Denhoff, Sean P. McAlister, W. Ross McKinnon, Jean Lapointe, and Albert Chin "Broad-spectrum light emission from metal-insulator-silicon tunnel diodes", Proc. SPIE 5730, Optoelectronic Integration on Silicon II, (7 March 2005); https://doi.org/10.1117/12.586431
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