Fabrication process for low-cost GaInAsP/InP etched-facet photodetectors

Nicolas Michel; Jacqueline Lehoux; Alexandre Marceaux; Olivier Parillaud; Nakita Vodjdani

doi:10.1117/12.590137

11 March 2005 Fabrication process for low-cost GaInAsP/InP etched-facet photodetectors

Nicolas Michel, Jacqueline Lehoux, Alexandre Marceaux, Olivier Parillaud, Nakita Vodjdani

Proceedings Volume 5731, Photonics Packaging and Integration V; (2005) https://doi.org/10.1117/12.590137
Event: Integrated Optoelectronic Devices 2005, 2005, San Jose, California, United States

Abstract

The optical waveguide entry facet of high-speed, 40 GHz waveguide photodetectors is usually obtained by manual cleaving, which has limited accuracy (± 10 μm) and reduces fabrication yields. In our new fabrication process, the waveguide facet is obtained with Chemically Assisted Ion Beam Etching (CAIBE). Length is therefore precisely controlled by photolithography. The antireflection coating is also deposited collectively on the whole wafer, which further reduces costs. The bandwidth of the photodiodes is 50 GHz, and their optical responsivity is 0.6 A/W at 1.55 μm wavelength. Other techniques, such as Inductively Coupled Plasma Etching (ICP), were also investigated for reducing leakage current.

Citation Download Citation

Nicolas Michel, Jacqueline Lehoux, Alexandre Marceaux, Olivier Parillaud, and Nakita Vodjdani "Fabrication process for low-cost GaInAsP/InP etched-facet photodetectors", Proc. SPIE 5731, Photonics Packaging and Integration V, (11 March 2005); https://doi.org/10.1117/12.590137

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