Paper
25 March 2005 Feasibility of IR-to-UV detection in SiC/SiO2 heterostructures
Jeanlex Soares de Sousa, Valder N. Freire, Eronides Felisberto da Silva Jr.
Author Affiliations +
Abstract
We will discuss the advantages of the realization of SiC/SiO2 quantum structures and their optical absorption properties. Our calculations suggest that it is possible to extend the range of the optical absorption of such structures to build applications that operates from infrared to UV spectrum using a single material and band-structure engineering.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jeanlex Soares de Sousa, Valder N. Freire, and Eronides Felisberto da Silva Jr. "Feasibility of IR-to-UV detection in SiC/SiO2 heterostructures", Proc. SPIE 5732, Quantum Sensing and Nanophotonic Devices II, (25 March 2005); https://doi.org/10.1117/12.582768
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KEYWORDS
Silicon carbide

Absorption

Quantum wells

Heterojunctions

Electronics

Silicon

Crystals

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