Growth of carbon nanotubes by sublimation of silicon carbide substrates

William C. Mitchel; John Boeckl; David Tomlin; Weijie Lu; John Rigueur; Jonathan Reynolds

doi:10.1117/12.590456

25 March 2005 Growth of carbon nanotubes by sublimation of silicon carbide substrates

William C. Mitchel, John Boeckl, David Tomlin, Weijie Lu, John Rigueur, Jonathan Reynolds

Proceedings Volume 5732, Quantum Sensing and Nanophotonic Devices II; (2005) https://doi.org/10.1117/12.590456
Event: Integrated Optoelectronic Devices 2005, 2005, San Jose, California, United States

Abstract

Aligned carbon nanotubes (CNT’s) have been found to form on both the Si and C faces of silicon carbide (SiC) wafers at high temperature. The CNT’s form when the SiC wafer is exposed to temperatures in the range 1400-1700°C under moderate vacuum. The CNT’s are aligned roughly parallel to the surface. After a half hour at 1700°C under vacuum of 10^-4torr, a near continuous CNT layer about 250nm thick is formed. The entire surface of the SiC is covered with CNT’s including both single and multiwalled tubes, and some graphitic carbon. SEM, TEM, AFM, XPS and Raman scattering measurements have been used to analyse the CNT/SiC structures. The metal catalyst free CNT’s on SiC exhibit low density of structural defects and are very straight. The carbon source is believed to be residual carbon from the SiC left on the surface after preferential evaporation of Si. It is speculated that CNT's growth is catalysed by low concentrations of residual oxygen in the chamber during growth. The vacuum conditions can significantly affect CNT's growth. Single wall carbon nanotubes are evident in Raman spectra on the samples grown at 10^-3 Torr, not on these grown at 10^-5Torr.

Citation Download Citation

William C. Mitchel, John Boeckl, David Tomlin, Weijie Lu, John Rigueur, and Jonathan Reynolds "Growth of carbon nanotubes by sublimation of silicon carbide substrates", Proc. SPIE 5732, Quantum Sensing and Nanophotonic Devices II, (25 March 2005); https://doi.org/10.1117/12.590456

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