Self-assembled SiGe dots

Jean-Marc Baribeau; Nelson L. Rowell; David J. Lockwood

doi:10.1117/12.573063

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25 March 2005 Self-assembled SiGe dots

Jean-Marc Baribeau, Nelson L. Rowell, David J. Lockwood

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Proceedings Volume 5732, Quantum Sensing and Nanophotonic Devices II; (2005) https://doi.org/10.1117/12.573063
Event: Integrated Optoelectronic Devices 2005, 2005, San Jose, California, United States

Abstract

We review recent progress in the growth and characterization of Si_1-xGe_x islands and Ge dots on (001) Si. We discuss the evolution of the island morphology with Si_1-xGe_x coverage, and the effect of growth parameters or post-growth annealing on the shape of the islands and dots. We outline some of the structural, and optical properties of Si_1-xGe_x islands and review recent progress in the determination of their composition and strain distribution. We describe the use of undulated Si_1-xGe_x islands superlattices for infrared detection at telecommunication wavelengths. We discuss various approaches currently being investigated to engineer Si_1-xGe_x quantum dots and in particular control their size, density and spatial distribution. For example, we show how C pre-deposition on Si (001) can influence nucleation and growth of Ge islands. We also show how low temperature Si homoepitaxy can lead to a particular surface cusp morphology that may promote dot nucleation.

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Jean-Marc Baribeau, Nelson L. Rowell, and David J. Lockwood "Self-assembled SiGe dots", Proc. SPIE 5732, Quantum Sensing and Nanophotonic Devices II, (25 March 2005); https://doi.org/10.1117/12.573063

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