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4 April 2005 Light confinement and absorption in metal-semiconductor-metal nanostructures
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Abstract
New concepts for efficient light absorption in nanoscale metal-semiconductor-metal photodetectors are analyzed from both theoretical and experimental point of view. They are based on sub-wavelength metallic gratings which allows light confinement in tiny volumes (< 100 nm) close to electrodes (< 100 nm). Two photodetector structures are proposed: (i) a resonant-cavity-enhanced subwavelength metal-semiconductor-metal photodetector, and (ii) a nanoscale metal-semiconductor grating photodetector. External quantum efficiency as high as 9 % has been obtained in 40 x 100 nm2 cross-section GaAs wires, limited by fabrication technology. These results show promising features for highly efficient and ultrafast photodetectors.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Stephane Collin, Fabrice Pardo, Roland Teissier, Nathalie Bardou, Christophe Dupuis, Ronan Mahe, Laurence Ferlazzo, Edmond Cambril, Veronique Thierry-Mieg, Aristide Lemaitre, and Jean-Luc Pelouard "Light confinement and absorption in metal-semiconductor-metal nanostructures", Proc. SPIE 5734, Quantum Dots, Nanoparticles, and Nanoclusters II, (4 April 2005); https://doi.org/10.1117/12.597202
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