Paper
1 April 2005 AlGaInAs/GaAs record high-power conversion efficiency and record high-brightness coolerless 915-nm multimode pumps
Igor Berishev, Alexey Komissarov, Nikolay Moshegov, Pavel Trubenko, Lisa Wright, Andrei Berezin, Svetlan Todorov, Alexander Ovtchinnikov
Author Affiliations +
Abstract
High power highly-efficient AlGa(In)As/GaAs multimode diodes operating at 915 nm range have been developed. 2 mm long-cavity Chips-On-Submount demonstrate 72% peak power conversion efficiency at 25°C heatsink temperature. Peak power efficiency over 50% was recorded up to 130°C heatsink temperature. CW power launched at 7°C heatsink temperature from 20 um wide aperture devices is around 8.5 W and is thermally limited. This output power level translates into record-high brightness on the facet: > 65 MW/cm2. Device reliability assessment indicates high potential of such devices to operate reliably at high electrical and optical power densities.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Igor Berishev, Alexey Komissarov, Nikolay Moshegov, Pavel Trubenko, Lisa Wright, Andrei Berezin, Svetlan Todorov, and Alexander Ovtchinnikov "AlGaInAs/GaAs record high-power conversion efficiency and record high-brightness coolerless 915-nm multimode pumps", Proc. SPIE 5738, Novel In-Plane Semiconductor Lasers IV, (1 April 2005); https://doi.org/10.1117/12.585337
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CITATIONS
Cited by 8 scholarly publications and 1 patent.
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KEYWORDS
Heatsinks

Diodes

Semiconductor lasers

Reliability

Thermal modeling

Coating

Manufacturing

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