Properties of violet laser diodes grown on bulk GaN substrates

Piotr Perlin; Lucja Marona; Tomasz Swietlik; Michal Leszczynski; Pawel Prystawko; Przemyslaw Wisniewski; Robert Czernecki; Gijs Franssen; Szymon Grzanka; Grzegorz Kamler; Jola Borysiuk; Janusz Weyher; Izabella Grzegory; Tadeusz Suski; Sylwester Porowski; Till Riemann; Jurgen Christen

doi:10.1117/12.587040

1 April 2005 Properties of violet laser diodes grown on bulk GaN substrates

Piotr Perlin, Lucja Marona, Tomasz Swietlik, Michal Leszczynski, Pawel Prystawko, Przemyslaw Wisniewski, Robert Czernecki, Gijs Franssen, Szymon Grzanka, Grzegorz Kamler, Jola Borysiuk, Janusz Weyher, Izabella Grzegory, Tadeusz Suski, Sylwester Porowski, Till Riemann, Jurgen Christen

Author Affiliations +

Proceedings Volume 5738, Novel In-Plane Semiconductor Lasers IV; (2005) https://doi.org/10.1117/12.587040
Event: Integrated Optoelectronic Devices 2005, 2005, San Jose, California, United States

Abstract

High pressure grown GaN bulk crystals, because of their low defect density, are atractive for the use as substrates for blue-violet laser diode fabrication. These laser diodes are characterized by a low density of dislocations (8×10⁴-1×10⁵ cm^-2) and thus they possibly have the best crystalline quality ever reported for this type of nitride devices. Previously, we demonstrated that these lasers are able to emit a very high optical power under pulse operation. In the present paper we will demonstrate the details of their room temperature CW operation, giving good prognostics for the further development of these devices. Preliminary estimation of the internal losses indicated a very low internal absorption in the range of 5 cm^-1. The characterization of the aged devices did not reveal any dark lines or facet degradation. A correlation between the device lifetime and p-type layers growth methods will be suggested here.

Citation Download Citation

Piotr Perlin, Lucja Marona, Tomasz Swietlik, Michal Leszczynski, Pawel Prystawko, Przemyslaw Wisniewski, Robert Czernecki, Gijs Franssen, Szymon Grzanka, Grzegorz Kamler, Jola Borysiuk, Janusz Weyher, Izabella Grzegory, Tadeusz Suski, Sylwester Porowski, Till Riemann, and Jurgen Christen "Properties of violet laser diodes grown on bulk GaN substrates", Proc. SPIE 5738, Novel In-Plane Semiconductor Lasers IV, (1 April 2005); https://doi.org/10.1117/12.587040

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available