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7 March 2005 AlGaInP light-emitting diode with metal reflector structure
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Abstract
We have remarkably improved the Metal Bonding (MB) AlGaInP LED luminous efficiency in the dominant wavelength range form 570 nm to 630 nm. Micro Shaping technology is fabricated on the Surface of LED Chip in order to enhance the extraction efficiency. As a result, the luminous efficiency of the new micro shaping Structure AlGaInP LED can achieve 80 lm/w, at 615 nm dominant wavelength under 20mA injection current. The luminous efficiency increased up to 50% than report valve before.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wayne Jan, Tien-fu Liao, Tzer Peng Chen, and Chih Sung Chang "AlGaInP light-emitting diode with metal reflector structure", Proc. SPIE 5739, Light-Emitting Diodes: Research, Manufacturing, and Applications IX, (7 March 2005); https://doi.org/10.1117/12.589947
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