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7 March 2005 Superluminescent diodes at 1.55 μm based on quantum-well and quantum-dot active regions
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Quantum-well and quantum-dot superluminescent diodes operating at 1.55 μm at high power have been developed. An optical output power of more than 600 mW in pulsed mode was produced from the device having 8 identical quantum-wells at room temperature, corresponding to the wall-plug efficiency of 28%. A continuous wave power was 26 mW (p-side up mounting) and the spectral modulation depth was 15% over the entire emission spectral width of 25 nm. For a device with 5 non-identical quantum-wells, a 255-nm spectral width centered at 1.55 μm was achieved. For a device with 5 closely identical layers of quantum-dots the gain medium exhibited a spectral width of 181 nm around 1.55 μm.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wei Li, Risto Ronkko, Andreas Rydefalk, Pekka Poyhonen, and Markus Pessa "Superluminescent diodes at 1.55 μm based on quantum-well and quantum-dot active regions", Proc. SPIE 5739, Light-Emitting Diodes: Research, Manufacturing, and Applications IX, (7 March 2005);

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