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6 May 2005 Comparison of EUV mask architectures by process window analysis
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Abstract
Several masks have been fabricated and exposed with the small-field Micro Exposure Tool (MET) at the Advanced Light Source (ALS) synchrotron in Berkeley using EUV radiation at 13.5 nm wavelength. Investigated mask types include two different absorber masks with TaN absorber as well as an etched multilayer mask. The resulting printing performance under different illumination conditions were studied by process window analysis on wafer level. Features with resolution of 60 nm and below were resolved with all masks. The TaN absorber masks with different stack thicknesses showed a similar size of process window. The differences in process windows for line patterns were analyzed for 60 nm patterns. The implications on the choice of optimum mask architecture are discussed.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Siegfried Schwarzl, Frank-Michael Kamm, Stefan Hirscher, Klaus Lowack, Wolf-Dieter Domke, Markus Bender, Stefan Wurm, Adam R. Pawloski, Bruno La Fontaine, Christian Holfeld, Uwe Dersch, Florian Letzkus, and Joerg Butschke "Comparison of EUV mask architectures by process window analysis", Proc. SPIE 5751, Emerging Lithographic Technologies IX, (6 May 2005); https://doi.org/10.1117/12.599343
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