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10 May 2005 Metrology of laser-produced plasma light source for EUV lithography
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Abstract
Metrology concepts and related results are discussed for characterization of extreme ultraviolet (EUV) light sources based on laser-produced plasmas using metal foil and droplet targets. Specific designs of narrow-band EUV detectors employing multilayer mirrors and broadband detectors for droplet steering are described. Spatially resolved plasma imaging using in-band EUV pinhole cameras is discussed. A grazing-incidence flat-field EUV spectrometer is described that has been employed for spectroscopy in the 6 nm - 22 nm range. In addition, spectroscopic data of out-of-band radiation in the ultraviolet and visible spectral regions are presented. Results obtained for different wavelengths of the incident laser radiation and for both tin- and lithium foil- and droplet- targets are discussed.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
N. R. Boewering, J. R. Hoffman, O. V. Khodykin, C. L. Rettig, B. A. M. Hansson, A. I. Ershov, and I. V. Fomenkov "Metrology of laser-produced plasma light source for EUV lithography", Proc. SPIE 5752, Metrology, Inspection, and Process Control for Microlithography XIX, (10 May 2005); https://doi.org/10.1117/12.600809
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