Scatterometry measurement method for gate CD control of sub-130nm technology

Jeongyeol Jang; Sungho Kwak; Karl Lee; Keeho Kim; Heongsu Park; James Youn; Lucas Sohn

doi:10.1117/12.601581

10 May 2005 Scatterometry measurement method for gate CD control of sub-130nm technology

Jeongyeol Jang, Sungho Kwak, Karl Lee, Keeho Kim, Heongsu Park, James Youn, Lucas Sohn

Proceedings Volume 5752, Metrology, Inspection, and Process Control for Microlithography XIX; (2005) https://doi.org/10.1117/12.601581
Event: Microlithography 2005, 2005, San Jose, California, United States

Abstract

Recently, the scatterometry is becoming more and more popular as a inline metrology tool for lithography process control as well as etching process control because of the advantage of fast measurement with high accuracy. Especially, at the gate patterning that fabricates transistors, the scatterometry can be very powerful because it gives massive volume of CD (Critical Dimension) measurement data and gate poly profile, simultaneously. Those results could help to understand and forecast the performance of transistors. In order to achieve accurate and consistent measurement results by scatterometry, the setup of stable model and library is very crucial since it has nature of indirect measurement. For example, as defining of substrate conditions, modeling range of parameters, target values and type of models, scatterometry (in this paper, we call as OCD; Optical CD) gives different results even if we use same data basis. In this paper we have shown the best practice how to optimize variables of scatterometry to get accurate and stable results. We used the OCD(Optic CD: Accent CDS200) angular scatterometry system which can rotate HeNe laser light source from -47 to +47 degree. In order to investigate the substrate dependency, various silicon wafer substrates having periodic patterned with different materials such as photoresist, BARC, poly silicon, and thermal oxide film has been used. Finally, we observed OCD has the excellent capability for inline process controllability.

Citation Download Citation

Jeongyeol Jang, Sungho Kwak, Karl Lee, Keeho Kim, Heongsu Park, James Youn, and Lucas Sohn "Scatterometry measurement method for gate CD control of sub-130nm technology", Proc. SPIE 5752, Metrology, Inspection, and Process Control for Microlithography XIX, (10 May 2005); https://doi.org/10.1117/12.601581

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