Paper
4 May 2005 Bilayer resists based on polyhedral oligomeric silsesquioxane for 193-nm lithography
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Abstract
A novel nanomolecular resist based on POSS substituted with diazodiketo-functionalized cholate derivatives was successfully synthesized as a candidate for 193-nm lithography. The diazodiketo group was introduced into the cholate derivatives to provide the solubility change and to eliminate the problems of chemically amplified resists. The decomposition temperature of the resist was found to be 130°C. The initial lithographic studies showed the feasibility of the resist to be used as a candidate for 193-nm lithography.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ramakrishnan Ganesan, Jae-Hak Choi, Hyo-Jin Yun, Young-Gil Kwon, Kyoung-Seon Kim, Tae-Hwan Oh, and Jin-Baek Kim "Bilayer resists based on polyhedral oligomeric silsesquioxane for 193-nm lithography", Proc. SPIE 5753, Advances in Resist Technology and Processing XXII, (4 May 2005); https://doi.org/10.1117/12.599622
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Cited by 1 scholarly publication.
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KEYWORDS
Lithography

Silicon

Absorbance

Ultraviolet radiation

Standards development

Polymers

Semiconducting wafers

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