EUV resist patterning performance from the Intel microexposure tool (MET)

Heidi B. Cao; Wang Yueh; Jeanette Roberts; Bryan Rice; Robert Bristol; Manish Chandhok

doi:10.1117/12.600214

4 May 2005 EUV resist patterning performance from the Intel microexposure tool (MET)

Heidi B. Cao, Wang Yueh, Jeanette Roberts, Bryan Rice, Robert Bristol, Manish Chandhok

Proceedings Volume 5753, Advances in Resist Technology and Processing XXII; (2005) https://doi.org/10.1117/12.600214
Event: Microlithography 2005, 2005, San Jose, California, United States

Abstract

The patterning targets for EUV resists at the 32 nm node are stringent, and will require significant resist development in order to meet these targets. In this paper, we benchmark the patterning performance of current EUV resists against Intel targets. Resolution data for dense L/S structures, isolated lines, and contact hole structures show that current resists are close to meeting Intel requirements for the 32 nm node, though further optimization is needed. A trade-off is seen between LWR and sensitivity (6.0 nm LWR and 6.8 mJ/cm² for resist A versus 11.1 nm LWR and 2.7 mJ/cm² for resist C). However even at the higher dose, the LWR target is far from Intel’s spe. At best dose and focus sidewall angles of 85° were measured, decreasing by as much as 10° - 12° as the resist moved out of focus by 400 nm.

Citation Download Citation

Heidi B. Cao, Wang Yueh, Jeanette Roberts, Bryan Rice, Robert Bristol, and Manish Chandhok "EUV resist patterning performance from the Intel microexposure tool (MET)", Proc. SPIE 5753, Advances in Resist Technology and Processing XXII, (4 May 2005); https://doi.org/10.1117/12.600214

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