Paper
4 May 2005 Molecular resists based on polyhedral oligomeric silsesquioxanes (POSS)
Author Affiliations +
Abstract
Polyhedral Oligomeric Silsesquioxane (POSS) derivatives have been investigated as potential candidates for high resolution resists. POSS materials are cage compounds with defined mono-disperse molecular weights. These materials are attractive candidates for molecular resist development because of their commercial availability and the ease with which they can be derivatized. These resists are more suited for bilayer resist applications because of their high silicon content. We have developed positive bilayer resists suitable for 193-nm and other emerging lithographic applications.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ratnam Sooriyakumaran, Hoa Truong, Linda Sundberg, Mark Morris, Bill Hinsberg, Hiroshi Ito, Robert Allen, Wu-Song Huang, Dario Goldfarb, Sean Burns, and Dirk Pfeiffer "Molecular resists based on polyhedral oligomeric silsesquioxanes (POSS)", Proc. SPIE 5753, Advances in Resist Technology and Processing XXII, (4 May 2005); https://doi.org/10.1117/12.600615
Lens.org Logo
CITATIONS
Cited by 5 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Silicon

Line edge roughness

Polymers

Glasses

Standards development

Diffusion

Lithography

Back to Top