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4 May 2005 Molecular resists based on polyhedral oligomeric silsesquioxanes (POSS)
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Abstract
Polyhedral Oligomeric Silsesquioxane (POSS) derivatives have been investigated as potential candidates for high resolution resists. POSS materials are cage compounds with defined mono-disperse molecular weights. These materials are attractive candidates for molecular resist development because of their commercial availability and the ease with which they can be derivatized. These resists are more suited for bilayer resist applications because of their high silicon content. We have developed positive bilayer resists suitable for 193-nm and other emerging lithographic applications.
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Ratnam Sooriyakumaran, Hoa Truong, Linda Sundberg, Mark Morris, Bill Hinsberg, Hiroshi Ito, Robert Allen, Wu-Song Huang, Dario Goldfarb, Sean Burns, and Dirk Pfeiffer "Molecular resists based on polyhedral oligomeric silsesquioxanes (POSS)", Proc. SPIE 5753, Advances in Resist Technology and Processing XXII, (4 May 2005); https://doi.org/10.1117/12.600615
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