Current status of 157-nm lithography using a full-field scanner

Toshiyuki Ishimaru; Seiji Matsuura; Miyoshi Seki; Kiyoshi Fujii; Ryo Koizumi; Yuji Hakataya; Akihiko Moriya

doi:10.1117/12.599300

12 May 2005 Current status of 157-nm lithography using a full-field scanner

Toshiyuki Ishimaru, Seiji Matsuura, Miyoshi Seki, Kiyoshi Fujii, Ryo Koizumi, Yuji Hakataya, Akihiko Moriya

Proceedings Volume 5754, Optical Microlithography XVIII; (2005) https://doi.org/10.1117/12.599300
Event: Microlithography 2005, 2005, San Jose, California, United States

Abstract

In July 2004, the third FPA-5800 FS1 157-nm full-field scanner, developed by Canon Inc., was shipped to Selete. The scanner has an exposure field of 22 x 26 mm with a five-times reduction ratio. The numerical aperture is 0.80, which is the highest among all 157-nm scanners. We are now investigating tool performance, illumination uniformity, and imaging performance under various exposure conditions. In this paper, we will report our findings, focusing on the applicability of 157-nm dry lithography for the half-pitch 65-nm-node. We have obtained a resolution limit of 55-nm line-and-space (L&S) patterns with an alternating phase shifting mask. This corresponds to a 0.28 k1 factor. The depth of focus for these patterns at lens-center was 0.30 μm. For an attenuating PSM (Att-PSM) with annular illumination, the resolution limit was 65-nm L&S, which corresponds to 0.33 k1. The line width uniformity of 65-nm L&S with an Att-PSM was 15.0 nm. The dense-hole resolution was 80 nm. However, lens flare had a considerable effect on resist profiles, viewed as a difference between dark and bright field patterns. In addition, with the application of gate etching processes, the fabrication of a 40-nm line/120-nm pitch gate pattern was achieved. Improvement in the line width roughness (8.3 nm) is needed and should be attainable.

Citation Download Citation

Toshiyuki Ishimaru, Seiji Matsuura, Miyoshi Seki, Kiyoshi Fujii, Ryo Koizumi, Yuji Hakataya, and Akihiko Moriya "Current status of 157-nm lithography using a full-field scanner", Proc. SPIE 5754, Optical Microlithography XVIII, (12 May 2005); https://doi.org/10.1117/12.599300

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KEYWORDS

Etching

Scanners

Lithography

Line width roughness

Optical alignment

Semiconducting wafers

Photoresist processing

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