High-power injection lock laser platform for ArF dry/wet lithography

H. Mizoguchi; T. Inoue; J. Fujimoto; T. Yamazaki; T. Suzuki; T. Matsunaga; S. Sakanishi; M. Kaminishi; Y. Watanabe; T. Ohta; M. Nakane; M. Moriya; T. Nakaike; M. Shinbori; M. Yoshino; T. Kawasuji; H. Nogawa; T. Ito; H. Umeda; S. Tanaka; H. Taniguchi; Y. Sasaki; J. Kinoshita; T. Abe; H. Tanaka; H. Hayashi; K. Miyao; M. Niwano; A. Kurosu; M. Yashiro; H. Nagano; N. Matsui; T. Mimura; K. Kakizaki; M. Goto

doi:10.1117/12.600796

12 May 2005 High-power injection lock laser platform for ArF dry/wet lithography

H. Mizoguchi, T. Inoue, J. Fujimoto, T. Yamazaki, T. Suzuki, T. Matsunaga, S. Sakanishi, M. Kaminishi, Y. Watanabe, T. Ohta, M. Nakane, M. Moriya, T. Nakaike, M. Shinbori, M. Yoshino, T. Kawasuji, H. Nogawa, T. Ito, H. Umeda, S. Tanaka, H. Taniguchi, Y. Sasaki, J. Kinoshita, T. Abe, H. Tanaka, H. Hayashi, K. Miyao, M. Niwano, A. Kurosu, M. Yashiro, H. Nagano, N. Matsui, T. Mimura, K. Kakizaki, M. Goto

Author Affiliations +

Proceedings Volume 5754, Optical Microlithography XVIII; (2005) https://doi.org/10.1117/12.600796
Event: Microlithography 2005, 2005, San Jose, California, United States

Abstract

193-nm lithography is moving from the pre-production to the mass production phase and its target node is shifting from 90 nm to 65 nm. And now the ArF-immersion technology is spotlighted as the enabling technology for below 45nm node¹⁾. 157nm lithography is still important for next generation node below 45 nm as backup technology²⁾. Gigaphoton has already released G40A (20W, 0.35pm) in 2001, G41A (20W, 0.30pm)³⁾ in 2002, G42A (20W, 0.25pm)⁴⁾ in 2003 to the advanced lithography market. On the other hand, since 1998 we have been developing high power 157nm light source for micro lithography with injection lock technology in research phase⁵⁾⁶⁾. We have demonstrated a 30W, 0.12pm, @157nm line narrowed light source for microlithography with "Injection lock technology"¹⁾²⁾. Based on this injection lock technology, we have successfully developed "GigaTwin", a high power injection lock laser platform for 193nm lithography system. We have already released a high power ultra narrowed ArF laser "GT40A" (45W, 4000Hz, 11.25mJ, 0.18pm), with the GigaTwin platform.

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H. Mizoguchi, T. Inoue, J. Fujimoto, T. Yamazaki, T. Suzuki, T. Matsunaga, S. Sakanishi, M. Kaminishi, Y. Watanabe, T. Ohta, M. Nakane, M. Moriya, T. Nakaike, M. Shinbori, M. Yoshino, T. Kawasuji, H. Nogawa, T. Ito, H. Umeda, S. Tanaka, H. Taniguchi, Y. Sasaki, J. Kinoshita, T. Abe, H. Tanaka, H. Hayashi, K. Miyao, M. Niwano, A. Kurosu, M. Yashiro, H. Nagano, N. Matsui, T. Mimura, K. Kakizaki, and M. Goto "High-power injection lock laser platform for ArF dry/wet lithography", Proc. SPIE 5754, Optical Microlithography XVIII, (12 May 2005); https://doi.org/10.1117/12.600796

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