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12 May 2005 Investigation of viable approaches to AAPSM intensity imbalance reduction for 65nm lithography
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Abstract
This paper investigates possible solutions to intensity imbalance minimization for 65nm node application through rigorous vector simulations. It provides a strategic plan to select the right technology for AAPSM application. Technologies such as undercut, bias, combination of undercut and bias and use of a Transparent Etch Stop Layer (TESL) are compared. The study looks at the effect of through pitch, defocus, phase error and sidewall profile on space CD bias for the technologies mentioned to determine the set of conditions that would provide the best compromise between performance and manufacturability. Simulations indicate the use of TESL along with undercut would provide best compromise between manufacturability and performance. Simulation results show that performance can be improved considerably by optimizing phase target. The use of vertical side walls is sufficient if the purpose of simulation is to determine trends. For more accurate simulations it is suggested that the profile used in simulation be matched to profiles seen on manufactured AAPSM.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tejas Jhaveri, Rand Cottle, Yuan Zhang, and Christopher Progler "Investigation of viable approaches to AAPSM intensity imbalance reduction for 65nm lithography", Proc. SPIE 5754, Optical Microlithography XVIII, (12 May 2005); https://doi.org/10.1117/12.593219
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