Paper
12 May 2005 Mask enhancer technology for 45-nm node contact hole fabrication
Author Affiliations +
Abstract
We have proposed a new resolution enhancement technology using attenuated mask with phase shifting aperture, named "Mask Enhancer", for random-logic contact hole pattern printing. In this study, we apply a new mask blank on Mask Enhancer in order to prevent the light intensity loss caused by the mask topography effect. We also perform to expose the new Mask Enhancer on the first ArF immersion scanner, ASML AT1150i. We demonstrate that the new Mask Enhancer can achieve 45nm-node contact hole printing with sufficient lithographic performance with combination of immersion lithography.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Takashi Yuito, Vincent Wiaux, Lieve Van Look, Geert Vandenberghe, Shigeo Irie, Takahiro Matsuo, Akio Misaka, Hisashi Watanabe, and Masaru Sasago "Mask enhancer technology for 45-nm node contact hole fabrication", Proc. SPIE 5754, Optical Microlithography XVIII, (12 May 2005); https://doi.org/10.1117/12.598977
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Cited by 1 scholarly publication and 1 patent.
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KEYWORDS
Thin films

Photomasks

Transmittance

Lithography

Printing

Halftones

Semiconducting wafers

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