Paper
17 May 2005 Correlation analysis: a fast and reliable method for a better understanding of simulation models in optical lithography
Bernd Tollkuhn, Anne Heubner, Klaus Elian, Boris Ruppenstein, Andreas Erdmann
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Abstract
Nowadays, the advanced usage of simulation tools for optical lithography requires substantial knowledge about the impact of model parameters and process conditions on simulation results. In many cases up to 30 or 40 parameters have to be tuned for different experimental data in order to obtain reliable simulation results. Consequently, the investigation of the impact of all model and process parameters on simulation results can be very time consuming. Therefore, we applied a correlation analysis, a well known statistical method, that allows a sensitivity analysis of simulation parameters. We compared the results of the sensitivity analysis method with the outcome of a standard “one-factor-at-a-time-method” and discuss the advantages and disadvantages of both methodologies. A calibrated ArF photoresist model has been examined with both sensitivity analysis methods.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Bernd Tollkuhn, Anne Heubner, Klaus Elian, Boris Ruppenstein, and Andreas Erdmann "Correlation analysis: a fast and reliable method for a better understanding of simulation models in optical lithography", Proc. SPIE 5755, Data Analysis and Modeling for Process Control II, (17 May 2005); https://doi.org/10.1117/12.599390
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KEYWORDS
Process modeling

Calibration

Diffusion

Lithography

Optical proximity correction

Critical dimension metrology

Optical lithography

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