Paper
8 December 2004 Characterization of ZnO films grown on different substrates by L-MBE method
Xiaodong Yang, Jingwen Zhang, Qing'an Xu, Yongning He, Hongbo Wang, Weifeng Zhang, Xun Hou
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Proceedings Volume 5774, Fifth International Conference on Thin Film Physics and Applications; (2004) https://doi.org/10.1117/12.608013
Event: Fifth International Conference on Thin Film Physics and Applications, 2004, Shanghai, China
Abstract
ZnO films were fabricated using Laser molecular beam epitaxy method on different substrates including Si(001), C-plane and R-plane Al2O3. The crystallinity and orientation of the films, as well as the epitaxial relationship between ZnO films and the substrate were studied using X-ray diffraction (XRD) technique. For the films grown on C-plane Al2O3 and Si(001) substrates, Highly c-axis oriented ZnO films were obtained. The surface morphology and roughness of ZnO films were determined by atomic force microscopy (AFM) and Reflection High Energy Electron diffraction (RHEED).
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xiaodong Yang, Jingwen Zhang, Qing'an Xu, Yongning He, Hongbo Wang, Weifeng Zhang, and Xun Hou "Characterization of ZnO films grown on different substrates by L-MBE method", Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); https://doi.org/10.1117/12.608013
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KEYWORDS
Zinc oxide

Aluminum

Atomic force microscopy

Sapphire

Diffraction

X-ray diffraction

Crystals

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