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8 December 2004 Efficient field emission from porous silicon
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Proceedings Volume 5774, Fifth International Conference on Thin Film Physics and Applications; (2004) https://doi.org/10.1117/12.607469
Event: Fifth International Conference on Thin Film Physics and Applications, 2004, Shanghai, China
Abstract
Patterned porous silicon (PS) films were fabricated based on hydrogen ion implantation technique and typical electrochemical anodic etching method. The surface morphology and characteristics of the films were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), and atomic force microscopy (AFM). The efficient field emission with low turn-on field of about 3.5V/μm at current density of 0.1μA/cm2 was obtained. The emission current density from the PS films reached 1mA/cm2 under a applied field of about 12.5V/μm. The experimental results demonstrate that the PS films have great potential applications for flat panel displays.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yongsheng Zhang, Ke Yu, Laiqiang Luo, and Ziqiang Zhu "Efficient field emission from porous silicon", Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); https://doi.org/10.1117/12.607469
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