Epitaxial growth of atomically smooth (111)-oriented MgO films on Si (111) substrate by pulsed laser deposition

Tong Lai Chen; Xiao Min Li; Xia Zhang; Wei Dong Yu; Xiang Dong Gao

doi:10.1117/12.608010

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8 December 2004 Epitaxial growth of atomically smooth (111)-oriented MgO films on Si (111) substrate by pulsed laser deposition

Tong Lai Chen, Xiao Min Li, Xia Zhang, Wei Dong Yu, Xiang Dong Gao

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Proceedings Volume 5774, Fifth International Conference on Thin Film Physics and Applications; (2004) https://doi.org/10.1117/12.608010
Event: Fifth International Conference on Thin Film Physics and Applications, 2004, Shanghai, China

Abstract

(111)-oriented MgO thin films have been deposited on Si (111) substratres by pulsed laser deposition (PLD). The whole growth process of the films was in-situ monitored by using reflection high energy electron diffraction (RHEED) apparatus. The films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM) and scanning electron microscopy (SEM). Furthermore, the leakage current measurement of MgO films was also performed. Completely (111)-oriented MgO films with atomically smooth surfaces were obtained. The HREED observations show that the growth mode of the MgO films is 2D layer-by-layer growth. And the I-V characteristics evidenced the excellent crystallinity of the MgO films.

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Tong Lai Chen, Xiao Min Li, Xia Zhang, Wei Dong Yu, and Xiang Dong Gao "Epitaxial growth of atomically smooth (111)-oriented MgO films on Si (111) substrate by pulsed laser deposition", Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); https://doi.org/10.1117/12.608010

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