Field emission behavior of GaN nanoparticles and nanobelts

Ke Yu; Yongsheng Zhang; Laiqiang Luo; Ziqiang Zhu

doi:10.1117/12.608008

8 December 2004 Field emission behavior of GaN nanoparticles and nanobelts

Ke Yu, Yongsheng Zhang, Laiqiang Luo, Ziqiang Zhu

Proceedings Volume 5774, Fifth International Conference on Thin Film Physics and Applications; (2004) https://doi.org/10.1117/12.608008
Event: Fifth International Conference on Thin Film Physics and Applications, 2004, Shanghai, China

Abstract

Gallium nitride (GaN) nanoparticles and nanobelts films are successfully synthesized on Si (111) substrates through ammoniating Ga₂O₃ thin films deposited by radio frequency magnetron sputtering. X-ray diffraction (XRD), scanning electronic microscope (SEM), transmission electronic microscope (TEM) are carried out to analyze as-synthesized GaN products. The field emission measurements show that the as-synthesized GaN nanoparticles and nanobelts have lower turn-on field of 5.8 and 6.1V/μm at the current density of 0.1μA/cm², respectively. It is found that the Fowler-Nordheim (FN) plot of nanobelts exhibits nonlinearity. The experimental results demonstrated that there were great potential applications of the GaN nanoparticles and nanobelts for flat panel displays.

Citation Download Citation

Ke Yu, Yongsheng Zhang, Laiqiang Luo, and Ziqiang Zhu "Field emission behavior of GaN nanoparticles and nanobelts", Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); https://doi.org/10.1117/12.608008

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