Field emission behavior of GaN nanoparticles and nanobelts

Ke Yu; Yongsheng Zhang; Laiqiang Luo; Ziqiang Zhu

doi:10.1117/12.608008

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8 December 2004 Field emission behavior of GaN nanoparticles and nanobelts

Ke Yu, Yongsheng Zhang, Laiqiang Luo, Ziqiang Zhu

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Proceedings Volume 5774, Fifth International Conference on Thin Film Physics and Applications; (2004) https://doi.org/10.1117/12.608008
Event: Fifth International Conference on Thin Film Physics and Applications, 2004, Shanghai, China

Abstract

Gallium nitride (GaN) nanoparticles and nanobelts films are successfully synthesized on Si (111) substrates through ammoniating Ga₂O₃ thin films deposited by radio frequency magnetron sputtering. X-ray diffraction (XRD), scanning electronic microscope (SEM), transmission electronic microscope (TEM) are carried out to analyze as-synthesized GaN products. The field emission measurements show that the as-synthesized GaN nanoparticles and nanobelts have lower turn-on field of 5.8 and 6.1V/μm at the current density of 0.1μA/cm², respectively. It is found that the Fowler-Nordheim (FN) plot of nanobelts exhibits nonlinearity. The experimental results demonstrated that there were great potential applications of the GaN nanoparticles and nanobelts for flat panel displays.

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Ke Yu, Yongsheng Zhang, Laiqiang Luo, and Ziqiang Zhu "Field emission behavior of GaN nanoparticles and nanobelts", Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); https://doi.org/10.1117/12.608008

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