Preparation and performance of phase retarder at the wavelength of 1315-nm

Jianbing Huang; Jianda Shao; Yingjian Wang; Zhengxiu Fan

doi:10.1117/12.608009

Translator Disclaimer

8 December 2004 Preparation and performance of phase retarder at the wavelength of 1315 nm

Jianbing Huang, Jianda Shao, Yingjian Wang, Zhengxiu Fan

Author Affiliations +

Proceedings Volume 5774, Fifth International Conference on Thin Film Physics and Applications; (2004) https://doi.org/10.1117/12.608009
Event: Fifth International Conference on Thin Film Physics and Applications, 2004, Shanghai, China

Abstract

The periodic dielectric phase retarders that produce a ±90° phase shift between the p- and s- polarization components at the incident angle of 54° and the wavelength of 1315nm while maintaining high reflectivity for both components are designed. An optimization technique has been used to determine the layer thickness for a coating design that produce a 270±1° phase shift between the p- and s- polarization components over 1285-1345nm while the average reflectivity is over 99.5%. Then the designed retarders were prepared by ion beam sputtering (IBS), and the phase shift was 262.4±1.8° and the reflectivity was over 99.6% at the design waveband.

Citation Download Citation

Jianbing Huang, Jianda Shao, Yingjian Wang, and Zhengxiu Fan "Preparation and performance of phase retarder at the wavelength of 1315 nm", Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); https://doi.org/10.1117/12.608009

ACCESS THE FULL ARTICLE