Paper
8 December 2004 Research for polyimide as a sacrificial layer in MEMS device
Meili Hu, Jinjin Chen, Zhongshen Lai, Huibing Mao, Dexin Sheng
Author Affiliations +
Proceedings Volume 5774, Fifth International Conference on Thin Film Physics and Applications; (2004) https://doi.org/10.1117/12.608035
Event: Fifth International Conference on Thin Film Physics and Applications, 2004, Shanghai, China
Abstract
Polyimide has been an important sacrificial layer material in the MEMS switch. Polyimide can be spun and photographied on silicon substrate. NaOH liquid can etch and develop polyimide. Then it needs to cure. After MEMS switch are manufactured, polyimide must be removed. The different cure temperature and time impacts the character of polyimide. The experiment result shows that it is easy to remove and can be lithographed. So it is suitable for microwave device. In this paper, refers that polyimide can be etched by NaOH, O2 and CF4.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Meili Hu, Jinjin Chen, Zhongshen Lai, Huibing Mao, and Dexin Sheng "Research for polyimide as a sacrificial layer in MEMS device", Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); https://doi.org/10.1117/12.608035
Lens.org Logo
CITATIONS
Cited by 2 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Etching

Microelectromechanical systems

Silicon

Switches

Photography

Liquids

Dry etching

RELATED CONTENT

Study on DC-contact MEMS switches
Proceedings of SPIE (December 08 2004)
A novel 3D low voltage electrostatic RF MEMS switch with...
Proceedings of SPIE (January 09 2008)
Advanced silicon trench etching in MEMS applications
Proceedings of SPIE (August 31 1998)
Narrow-gap DNA tweezers for short DNA molecules
Proceedings of SPIE (October 25 2004)

Back to Top