Study on DC-contact MEMS switches

J. J. Chen; H. Z. Wei; M. L. Hu; Zong Shen Lai

doi:10.1117/12.607901

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8 December 2004 Study on DC-contact MEMS switches

J. J. Chen, H. Z. Wei, M. L. Hu, Zong Shen Lai

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Proceedings Volume 5774, Fifth International Conference on Thin Film Physics and Applications; (2004) https://doi.org/10.1117/12.607901
Event: Fifth International Conference on Thin Film Physics and Applications, 2004, Shanghai, China

Abstract

This paper presents the design, fabrication and performance of a metal-to-metal contact shunt micro-electro-mechanical (MEMS) switch. The switch was composed of a fixed-fixed Al_0.96Si_0.04 alloy beam with two pull-down electrodes and a central dc-contact area. The switch was placed in an in-line configuration in a coplanar waveguide transmission line. The best RF performance shows insertion loss of less than 0.3dB and isolation of greater than 35dB for all frequencies up to 10 GHz.

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J. J. Chen, H. Z. Wei, M. L. Hu, and Zong Shen Lai "Study on DC-contact MEMS switches", Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); https://doi.org/10.1117/12.607901

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