Paper
8 December 2004 The test of new-type MEMS ammonia-sensitive sensor
Lingjie Wang, Jishen Lin
Author Affiliations +
Proceedings Volume 5774, Fifth International Conference on Thin Film Physics and Applications; (2004) https://doi.org/10.1117/12.607481
Event: Fifth International Conference on Thin Film Physics and Applications, 2004, Shanghai, China
Abstract
The paper discusses the test of the new type MEMS ammonia sensitive sensor. The sensor has a MOS structure. The sensitivity and stability of the sensor was studied. The paper focuses on the influence of the thin film decorated on the gate. The experimental results showed that the sensor has a good sensitivity and selectivity, that’s because its gate is decorated by mixed metal thin film. And only when the thin film is between 10nm and 30nm, the sensor was most sensitive to NH3.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Lingjie Wang and Jishen Lin "The test of new-type MEMS ammonia-sensitive sensor", Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); https://doi.org/10.1117/12.607481
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KEYWORDS
Sensors

Thin films

Metals

Microelectromechanical systems

Molybdenum

Gold

Palladium

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