Radiation hardening of ASICs in deep submicron CMOS technologies

Robert Szczygiel

doi:10.1117/12.610622

23 February 2005 Radiation hardening of ASICs in deep submicron CMOS technologies

Robert Szczygiel

Proceedings Volume 5775, Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments III; (2005) https://doi.org/10.1117/12.610622
Event: Wilga 2004, 2004, Wilga, Poland

Abstract

The radiation hardness is a critical issue for a number of ASIC applications. The ASICs used in space, physics experiments or in medical instrumentations have to deal with the radiation and its effects. The paper gives a short overview of the radiation-induced effects in the CMOS devices and presents design and system aspects of the ASIC radiation hardening. Examples of chips designed for heavy radiation environment are presented.

Citation Download Citation

Robert Szczygiel "Radiation hardening of ASICs in deep submicron CMOS technologies", Proc. SPIE 5775, Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments III, (23 February 2005); https://doi.org/10.1117/12.610622

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available