Effects Of Annealing On The Optical Properties Of Proton Irradiated n-type Gallium Arsenide

L. L. Liou; W. G. Spitzer; J. M. Zavada; H. A. Jenkinson

doi:10.1117/12.950755

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11 September 1985 Effects Of Annealing On The Optical Properties Of Proton Irradiated n-type Gallium Arsenide

L. L. Liou, W. G. Spitzer, J. M. Zavada, H. A. Jenkinson

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Proceedings Volume 0578, Integrated Optical Circuit Engineering II; (1985) https://doi.org/10.1117/12.950755
Event: 1985 Cambridge Symposium, 1985, Cambridge, United States

Abstract

The optical properties of proton irradiated n-type GaAs, implanted at room temperature and subsequently furnace annealed, are examined using infrared reflectance spectroscopy. Substantial changes in the reflectance spectra are observed with post-implantation annealing. Computer simulations , based on a Drude model free carrier contribution to the dielectric constant, are used to obtain best fit parameters to the measured spectra. The resulting free carrier profiles display a two layer characteristic. The top layer encompasses the implanted region and remains stable with thermal treatment up to 500 C. A lower layer appears with annealing at 200 C and diffuses deeply into the substrate material. Further annealing eliminates the lower layer but the top layer is present even after a 600 C anneal. An activation energy of 1.2 eV and a diffusion preexponential factor of 4.3 E-1 cm2/s are found for this process.

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L. L. Liou, W. G. Spitzer, J. M. Zavada, and H. A. Jenkinson "Effects Of Annealing On The Optical Properties Of Proton Irradiated n-type Gallium Arsenide", Proc. SPIE 0578, Integrated Optical Circuit Engineering II, (11 September 1985); https://doi.org/10.1117/12.950755

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