Predicted performance of HgCdTe photodiodes for 15-25 µm detection

M. B. Reine; S. P. Tobin; P. W. Norton; P. LoVecchio

doi:10.1117/12.601941

31 May 2005 Predicted performance of HgCdTe photodiodes for 15-25 μm detection

M. B. Reine, S. P. Tobin, P. W. Norton, P. LoVecchio

Proceedings Volume 5783, Infrared Technology and Applications XXXI; (2005) https://doi.org/10.1117/12.601941
Event: Defense and Security, 2005, Orlando, Florida, United States

Abstract

This paper reviews and assesses progress in back-illuminated P-on-n photovoltaic HgCdTe detector technology, grown by two-layer Liquid Phase Epitaxy on CdZnTe substrates, for applications at wavelengths beyond 15 μm in a new generation of spaceborne multispectral instruments for remote sensing. We review data that demonstrate the feasibility of useful cutoff wavelengths as long as 17.5 μm. We recommend that LPE photovoltaic HgCdTe technology be extended to the 20-25 μm wavelength region for single elements and arrays for NASA remote-sensing applications.

Citation Download Citation

M. B. Reine, S. P. Tobin, P. W. Norton, and P. LoVecchio "Predicted performance of HgCdTe photodiodes for 15-25 μm detection", Proc. SPIE 5783, Infrared Technology and Applications XXXI, (31 May 2005); https://doi.org/10.1117/12.601941

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