Resonant cavity enhanced InGaAs photodiodes for high speed detection of 1.55 µm infrared radiation

J. Kaniewski; J. Muszalski; J. Pawluczyk; J. Piotrowski

doi:10.1117/12.602687

31 May 2005 Resonant cavity enhanced InGaAs photodiodes for high speed detection of 1.55 μm infrared radiation

J. Kaniewski, J. Muszalski, J. Pawluczyk, J. Piotrowski

Proceedings Volume 5783, Infrared Technology and Applications XXXI; (2005) https://doi.org/10.1117/12.602687
Event: Defense and Security, 2005, Orlando, Florida, United States

Abstract

Resonant cavity enhanced photodetectors are promising candidates for applications in high-speed optical communications due to their high quantum efficiency and large bandwidth. This is a consequence of placing the thin absorber of the photodetector inside a Fabry-Perot microcavity so the absorption could be enhanced by recycling the photons with resonance wavelength. The performance of uncooled resonant cavity enhanced InGaAs/InAlAs photovoltaic devices operating near 1.55 μm has been studied both theoretically and experimentally. The analyses include two different types of structures with cavity end mirrors made of semiconducting and metallic reflectors as well as semiconducting and hybrid (dielectric Si₃N₄/SiO₂ + metal) Bragg reflectors. Optimization of the device design includes: absorption layer thickness, position of absorption layer within the cavity and number of layers in distributed Bragg reflectors. Dependence of absorption on wavelength and incidence angle are discussed. Various issues related to applications of resonance cavity enhanced photodiodes in optical systems are considered. Practical devices with metallic and hybrid mirrors were fabricated by molecular beam epitaxy and by microwave-compatible processing. A properly designed device of this type has potential for subpicosecond response time.

Citation Download Citation

J. Kaniewski, J. Muszalski, J. Pawluczyk, and J. Piotrowski "Resonant cavity enhanced InGaAs photodiodes for high speed detection of 1.55 μm infrared radiation", Proc. SPIE 5783, Infrared Technology and Applications XXXI, (31 May 2005); https://doi.org/10.1117/12.602687

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