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31 May 2005 Third generation FPA development status at Raytheon Vision Systems (Invited Paper)
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Raytheon Vision Systems (RVS) is developing two-color, large-format infrared FPAs to support the US Army's Third Generation FLIR systems. RVS has produced 640 x 480 two-color FPAs with a 20 micron pixel pitch. Work is also underway to demonstrate a 1280 x 720 two-color FPA in 2005. The FPA architecture has been designed to achieve nearly simultaneous temporal detection of the spectral bands while being producible for pixel dimensions as small as 20 microns. Raytheon's approach employs a readout integrated circuit (ROIC) with Time Division Multiplexed Integration (TDMI). This ROIC is coupled to bias-selectable two-color detector array with a single contact per pixel. The two-color detector arrays are fabricated from MBE-grown HgCdTe triple layer heterojunction (TLHJ) wafers. The single indium bump design is producible for 20 μm unit cells and exploits mature fabrication processes that are in production at RVS for Second Generation FPAs. This combination allows for the high temporal and spatial color registration while providing a low-cost, highly producible and robust manufacturing process. High-quality MWIR/LWIR (M/L) 640 x 480 TDMI FPAs with have been produced and imaged from multiple fabrication lots. These FPAs have LWIR cutoffs ranging to 11 micron at 78K. These 20 micron pixel FPAs have demonstrated excellent sensitivity and pixel operabilities exceeding 99%. NETDs less than 25 mK at f/5 have been demonstrated for both bands operating simultaneously.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
W. A. Radford, E. A. Patten, D. F. King, G. K. Pierce, J. Vodicka, P. Goetz, G. Venzor, E. P. Smith, R. Graham, S. M. Johnson, J. Roth, B. Nosho, and J. Jensen "Third generation FPA development status at Raytheon Vision Systems (Invited Paper)", Proc. SPIE 5783, Infrared Technology and Applications XXXI, (31 May 2005);


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