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18 May 2005 Aligned array FETs as a route toward THz nanotube transistors
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Abstract
The development of nanowire and nanotube FETs for high frequency applications faces a challenge of impedance matching, due to the inherent mismatch between the resistance quantum (≈ 25 kΩ) typical of nanodevices, and the characteristic impedance of free space (≈ 377 Ω) typical of RF circuits. One possible solution is to use parallel nanotube or nanowire FETs to decrease the input impedance, and increase the drive current. In this paper, we present our progress towards this goal using aligned arrays of nanotube FETs. Initial studies on randomly oriented CVD grown devices give mobilities of 4 cm2/V-s. These initial devices carry ≈ 0.25 mA of current. Even higher mobilities (hence very high operational frequencies up to THz) should be possible with aligned nanotube FETs.
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Zhen Yu and Peter J. Burke "Aligned array FETs as a route toward THz nanotube transistors", Proc. SPIE 5790, Terahertz for Military and Security Applications III, (18 May 2005); https://doi.org/10.1117/12.602661
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